Ni Silicide Processes For 22 nm CMOS Technology and Beyond

	Ni Silicide Processes For 22 nm CMOS Technology and Beyond
	Xu J(许静); Zhang QZ(张青竹); Yan J(闫江); Gao JF(高建峰); Zhao LC(赵利川)
刊名	ECS Transactions
	2014-03-01
公开日期	2015-05-06
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/12762]
专题	微电子研究所_集成电路先导工艺研发中心
通讯作者	Yan J(闫江)
推荐引用方式 GB/T 7714	Xu J,Zhang QZ,Yan J,et al. Ni Silicide Processes For 22 nm CMOS Technology and Beyond[J]. ECS Transactions,2014.
APA	许静,张青竹,闫江,高建峰,&赵利川.(2014).Ni Silicide Processes For 22 nm CMOS Technology and Beyond.ECS Transactions.
MLA	许静,et al."Ni Silicide Processes For 22 nm CMOS Technology and Beyond".ECS Transactions (2014).