Evolution of film curvature profile during light-emitting diode epitaxial growth

	Evolution of film curvature profile during light-emitting diode epitaxial growth
	Yan D(严冬)
刊名	Instrumentation Science & Technology
	2016-01-21
文献子类	期刊论文
英文摘要	Wafer bowing control is critical to improve epitaxial growth quality, especially for large wafers inside a metal–organic chemical vapor deposition reactor. An in-situ monitoring system was developed for real-time characterization of curvature mapping and epitaxial layer reflectance and temperature. Using deflectometry with parallel laser beams and position detector arrays, simultaneous curvature scans were conducted in two perpendicular directions over 4-in wafers.
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/16189]
专题	微电子研究所_微电子仪器设备研发中心
推荐引用方式 GB/T 7714	Yan D. Evolution of film curvature profile during light-emitting diode epitaxial growth[J]. Instrumentation Science & Technology,2016.
APA	严冬.(2016).Evolution of film curvature profile during light-emitting diode epitaxial growth.Instrumentation Science & Technology.
MLA	严冬."Evolution of film curvature profile during light-emitting diode epitaxial growth".Instrumentation Science & Technology (2016).