一种GaN基功率电子器件及其制备方法 | |
王鑫华; 刘新宇; 黄森; 赵超; 王文武; 包琦龙; 魏珂 | |
2018-08-28 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US10062775 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an epitaxial layer over the substrate. The epitaxial layer comprises a GaN-based heterostructure layer, a superlattice structure layer and a P-type cap layer. The superlattice structure layer is provided over the heterostructure layer, and the P-type cap layer is provided over the superlattice structure layer. By using this electronic device, gate voltage swing and safe gate voltage range of the GaN-based power electronic device manufactured on the basis of the P-type cap layer technique may be further extended, and dynamic characteristics of the device may be improved. Therefore, application process for the GaN-based power electronic device that is based on the P-type cap layer technique will be promoted. |
公开日期 | 2017-10-26 |
申请日期 | 2016-12-02 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.107/handle/172511/18881] |
专题 | 微电子研究所_高频高压器件与集成研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 王鑫华,刘新宇,黄森,等. 一种GaN基功率电子器件及其制备方法. US10062775. 2018-08-28. |
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