An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

	An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
	Xue HW(薛惠文); He QM(何启鸣); Jian GZ(菅光忠); Long SB(龙世兵); Liu M(刘明)
刊名	Nanoscale Research Letters
	2018-09-19
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18967]
专题	微电子研究所_微电子器件与集成技术重点实验室
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Xue HW,He QM,Jian GZ,et al. An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application[J]. Nanoscale Research Letters,2018.
APA	Xue HW,He QM,Jian GZ,Long SB,&Liu M.(2018).An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application.Nanoscale Research Letters.
MLA	Xue HW,et al."An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application".Nanoscale Research Letters (2018).