极紫外光刻掩模缺陷检测系统 | |
李海亮; 谢常青; 刘明; 李冬梅; 牛洁斌; 史丽娜; 朱效立 | |
2017-01-17 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US9546964 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (1), extreme ultraviolet light transmission parts (2, 3), an extreme ultraviolet lithography mask (4), a photon sieve (6) and a collection (7) and analysis (8) system. Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3); the extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6); and the photon sieve (6) forms a dark field image and transmits the same to the collection (7) and analysis (8) system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution. |
公开日期 | 2013-10-17 |
申请日期 | 2012-04-16 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.106/handle/172511/18226] |
专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 李海亮,谢常青,刘明,等. 极紫外光刻掩模缺陷检测系统. US9546964. 2017-01-17. |
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