Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory

	Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory
	Jin L(靳磊); Liu M(刘明); Jiang DD(姜丹丹); Huo ZL(霍宗亮); Wang Y(王艳); Zheng ZW(郑志威); Yang XN(杨潇楠)
刊名	IEEE ELECTRON DEVICE LETTERS
	2015
公开日期	2016-05-24
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/14897]
专题	微电子研究所_微电子器件与集成技术重点实验室
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Jin L,Liu M,Jiang DD,et al. Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory[J]. IEEE ELECTRON DEVICE LETTERS,2015.
APA	Jin L.,Liu M.,Jiang DD.,Huo ZL.,Wang Y.,...&Yang XN.(2015).Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory.IEEE ELECTRON DEVICE LETTERS.
MLA	Jin L,et al."Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory".IEEE ELECTRON DEVICE LETTERS (2015).