Damage produced on GaN surface by highly charged Krq+ irradiation

doi:10.1007/s41365-017-0326-4

	Damage produced on GaN surface by highly charged Krq+ irradiation
	Zhang, Chong-Hong2 ; Yan, Ting-Xing 1,2; Ding, Zhao-Nan 2; Liu, Hui-Ping2 ; Li, Jin-Yu2 ; Yang, Yi-Tao2 ; Zhang, Li-Qing1,2 ; Zhang, Heng-Qing 1,2; Xu, Chao-Liang 1,2
刊名	NUCLEAR SCIENCE AND TECHNIQUES
	2017-12-01
卷号	28 页码:6
关键词	GaN Highly charged Krypton ion AFM XPS UV-Vis transmittance spectra PL Raman spectra
ISSN号	1001-8042
DOI	10.1007/s41365-017-0326-4
英文摘要	Surface morphology, compositions, microstructure and optical properties of GaN film irradiated by highly charged Krq+ (q = 23, 15, 11) in two geometries to a fluence of 1 x 10(15) kr(q+)/cm(2) were studied using AFM, XPS, PL, Raman scattering and UV-visible spectroscopy. The AFM observation shows that the irradiated GaN area is a swollen terrace. The swelling rate increased with the charge state (potential energy). For the same charge state, the swelling rate of tilted incidence was greater than that for normal incidence. The XPS measurements reveal that N deficiency, Ga enrichment and Ga-O and Ga dangling bonds generated on the irradiated GaN surface increased with the charge state, and more N was lost for normal incidence than that for tilted incidence. The UV-Vis results show that the transmittance decreased with increasing charge state. For the same charge state, the transmittance for tilted incidence is higher than that for normal incidence. The PL spectra present that, with increasing charge state, the YL band intensity decreased, with a blueshift in its peak position; while the NBE peak intensity increased first and then reduced, and a blue luminescence band appeared. A rapid quenching of both the YL and the NEB for normal incidence was observed. Raman spectra display that screw dislocations perhaps were produced near the surface for normal incidence.
资助项目	National Natural Science Foundation of China[11675231] ; National Natural Science Foundation of China[91426304] ; National Natural Science Foundation of China[11105191] ; National Magnetic Confinement Fusion Program[2011GB108003] ; National Basic Research Program of China[2010CB832904]
WOS关键词	YELLOW LUMINESCENCE ; RAMAN-SCATTERING ; VACANCIES ; DEFECTS
WOS研究方向	Nuclear Science & Technology ; Physics
语种	英语
出版者	SPRINGER SINGAPORE PTE LTD
WOS记录号	WOS:000417223300007
资助机构	National Natural Science Foundation of China ; National Magnetic Confinement Fusion Program ; National Basic Research Program of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/46121]
专题	近代物理研究所_材料研究中心
通讯作者	Zhang, Chong-Hong
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Chong-Hong,Yan, Ting-Xing,Ding, Zhao-Nan,et al. Damage produced on GaN surface by highly charged Krq+ irradiation[J]. NUCLEAR SCIENCE AND TECHNIQUES,2017,28:6.
APA	Zhang, Chong-Hong.,Yan, Ting-Xing.,Ding, Zhao-Nan.,Liu, Hui-Ping.,Li, Jin-Yu.,...&Xu, Chao-Liang.(2017).Damage produced on GaN surface by highly charged Krq+ irradiation.NUCLEAR SCIENCE AND TECHNIQUES,28,6.
MLA	Zhang, Chong-Hong,et al."Damage produced on GaN surface by highly charged Krq+ irradiation".NUCLEAR SCIENCE AND TECHNIQUES 28(2017):6.