Investigation of defects in high-energy heavy ion implanted GaAs

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 近代物理研究所知识存储（2010之前）

	Investigation of defects in high-energy heavy ion implanted GaAs
	Chen, ZQ ; Wang, Z ; Wang, SJ ; Hou, MD
刊名	APPLIED RADIATION AND ISOTOPES
	2000
卷号	52 期号:1 页码:39-45
关键词	heavy ion implantation gallium arsenide defects positron annihilation
ISSN号	0969-8043
英文摘要	Undoped semi-insulating GaAs were implanted with 500 MeV Ne ions. Monte Carlo simulation revealed that the largest concentration of vacancies induced was around the end of the Ne ion range. Positron Annihilation measurement showed that after lower dose implantation, divacancies were formed, which coexisted with monovacancies. On increasing the dose, all the monovacancies changed to divacancies. The temperature dependence of positron lifetime suggested the existence of negatively charged antisites Ga-As. Near infra-red spectra were also measured to study the implantation induced amorphous layers. (C) 2000 Elsevier Science Ltd. All rights reserved.
WOS关键词	IRRADIATED SEMIINSULATING GAAS ; POSITRON-ANNIHILATION ; GALLIUM VACANCIES ; SI ; SEMICONDUCTORS ; ACCEPTORS ; LIFETIME ; DAMAGE ; INP
WOS研究方向	Chemistry ; Nuclear Science & Technology ; Radiology, Nuclear Medicine & Medical Imaging
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000084820400006
公开日期	2011-08-26
内容类型	期刊论文
源URL	[http://ir.imp.cas.cn/handle/113462/10243]
专题	近代物理研究所_近代物理研究所知识存储（2010之前）
通讯作者	Chen, ZQ
作者单位	1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Chen, ZQ,Wang, Z,Wang, SJ,et al. Investigation of defects in high-energy heavy ion implanted GaAs[J]. APPLIED RADIATION AND ISOTOPES,2000,52(1):39-45.
APA	Chen, ZQ,Wang, Z,Wang, SJ,&Hou, MD.(2000).Investigation of defects in high-energy heavy ion implanted GaAs.APPLIED RADIATION AND ISOTOPES,52(1),39-45.
MLA	Chen, ZQ,et al."Investigation of defects in high-energy heavy ion implanted GaAs".APPLIED RADIATION AND ISOTOPES 52.1(2000):39-45.