The effects of pre-irradiation on the formation of Si1-x Cx alloys | |
Wang, Yin-Shu; Li, Jin-Min; Wang, Yan-Bin; Wang, Yu-Tian; Sun, Guo-Sheng; Lin, Lan-Ying | |
刊名 | Wuli Xuebao/Acta Physica Sinica |
2001 | |
卷号 | 50页码:1332-1333 |
ISSN号 | 1000-3290 |
英文摘要 | Carbon ions were implanted into crystal Si to a concentration of(0.6-1.5)at% at room temperature. Some samples were pre-irradiated with 29Si+ ions, while others were not pre-irradiated. Then the two kinds of samples were implanted with 12C+ ions simultaneously, and Si1-x Cx alloys were grown by solid phase epitaxy with high-temperature annealing. The effects of pre-irradiation on the formation of Si1-x Cx alloys were studied. If the dose of implanted C ion was less than that for amorphizing Si crystals, the implanted C atoms would like to combine with defects produced during implantation, and then it was difficult for Si1-x Cx alloys to form after annealing at 950°C. Pre-irradiation was advantageous for Si1-x Cx alloy formation. With the increase of C ion dose, the damage produced by C ions increased. Pre-irradiation was unfavorable for Si1-x Cx alloy formation. If the im planted C concentration was higher than that for solid phase epitaxy solution, only part of the implanted C atoms form Si1-x Cx alloys and the effects of pre-irradiation could be neglected. As the annealing temperature was increased to 1050°C, Si1-x Cx alloys in both pre-irradiated and unpreirradiated samples of low C concentration remained, whereas most part of Si1-x Cx alloys in samples with high C concentration vanished. |
出版者 | Science Press |
内容类型 | 期刊论文 |
源URL | [http://119.78.100.186/handle/113462/64336] |
专题 | 中国科学院近代物理研究所 |
作者单位 | 1.Department of Physics, Beijing Normal University, Beijing 100875, China 2.Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China |
推荐引用方式 GB/T 7714 | Wang, Yin-Shu,Li, Jin-Min,Wang, Yan-Bin,et al. The effects of pre-irradiation on the formation of Si1-x Cx alloys[J]. Wuli Xuebao/Acta Physica Sinica,2001,50:1332-1333. |
APA | Wang, Yin-Shu,Li, Jin-Min,Wang, Yan-Bin,Wang, Yu-Tian,Sun, Guo-Sheng,&Lin, Lan-Ying.(2001).The effects of pre-irradiation on the formation of Si1-x Cx alloys.Wuli Xuebao/Acta Physica Sinica,50,1332-1333. |
MLA | Wang, Yin-Shu,et al."The effects of pre-irradiation on the formation of Si1-x Cx alloys".Wuli Xuebao/Acta Physica Sinica 50(2001):1332-1333. |
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