Single Event Effects in COTS Ferroelectric RAM Technologies

	Single Event Effects in COTS Ferroelectric RAM Technologies
	Zhang, Zhangang 1,2; Lei, Zhifeng 3; Yang, Zhenlei 4; Wang, Xiaohui 4; Wang, Bin 4; Liu, Jie4 ; En, Yunfei 3; Chen, Hui 3; Li, Bin 2; IEEE
	2015
页码	167-171
英文摘要	Single event effects (SEE) in two commercial-off-the-shelf (COTS) Ferroelectric Random Access Memory (FeRAM) technologies were investigated by heavy ions and pulsed laser irradiation. At least six SEE types were observed. The majority of the errors were caused by anomalies in the peripheral circuit, which was confirmed by the mirror SRAM technique, non-volatile test mode, and the detailed error information. Single event upset, single event functional interrupt and single event latchup cross sections were reported, with weak dependence on the supply voltage.
会议录	2015 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW)
会议录出版者	IEEE
会议录出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
语种	英语
WOS研究方向	Computer Science ; Engineering ; Physics
WOS记录号	WOS:000377773700027
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/57252]
专题	中国科学院近代物理研究所
通讯作者	Zhang, Zhangang
作者单位	1.China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China 2.S China Univ Technol, Guangzhou 510641, Guangdong, Peoples R China 3.CEPREI, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China 4.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Zhangang,Lei, Zhifeng,Yang, Zhenlei,et al. Single Event Effects in COTS Ferroelectric RAM Technologies[C]. 见:.