Retention loss in the ferroelectric (SrBi2Ta2O9)-insulator (HfO2)-silicon structure studied by piezoresponse force microscopy

doi:10.1209/0295-5075/98/27011

	Retention loss in the ferroelectric (SrBi2Ta2O9)-insulator (HfO2)-silicon structure studied by piezoresponse force microscopy
	Zhang, Z. H.1,2; Zhong, X. L.1,2; Zhang, Y.1,2; Wang, J. B.1,2; Lu, C. J.3; Ye, W. N.3; Zhou, Y. C.1,2
刊名	EPL
	2012-04-01
卷号	98
ISSN号	0295-5075
DOI	10.1209/0295-5075/98/27011
文献子类	Article
英文摘要	Metal-ferroelectric-insulator-silicon (MFIS) structures with SrBi2Ta2O9 as ferroelectric thin film and HfO2 as insulating buffer layer were fabricated by pulsed-laser deposition. The interfaces and memory window of the MFIS structure were investigated. Piezoresponse force microscopy was used to observe the change of domain images in order to investigate the retention characteristics, which demonstrated that the MFIS structure experiences retention loss via a random-walk-type process, identified by a stretched exponential-decay model. The corresponding mechanism was discussed based on the time-dependent depolarization field. Copyright (C) EPLA, 2012
WOS关键词	THIN-FILMS ; NANOSCALE
语种	英语
出版者	EPL ASSOCIATION, EUROPEAN PHYSICAL SOCIETY
WOS记录号	WOS:000303754100026
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/49045]
专题	中国科学院近代物理研究所
通讯作者	Zhang, Z. H.
作者单位	1.Xiangtan Univ, Inst Modern Phys, Xiangtan 411105, Hunan, Peoples R China 2.Xiangtan Univ, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China 3.Qingdao Univ, Lab Fiber Mat & Modern Text, Qingdao 266071, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Z. H.,Zhong, X. L.,Zhang, Y.,et al. Retention loss in the ferroelectric (SrBi2Ta2O9)-insulator (HfO2)-silicon structure studied by piezoresponse force microscopy[J]. EPL,2012,98.
APA	Zhang, Z. H..,Zhong, X. L..,Zhang, Y..,Wang, J. B..,Lu, C. J..,...&Zhou, Y. C..(2012).Retention loss in the ferroelectric (SrBi2Ta2O9)-insulator (HfO2)-silicon structure studied by piezoresponse force microscopy.EPL,98.
MLA	Zhang, Z. H.,et al."Retention loss in the ferroelectric (SrBi2Ta2O9)-insulator (HfO2)-silicon structure studied by piezoresponse force microscopy".EPL 98(2012).