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Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature
Qi, Q.; Zhang, W. Z.; Shi, L. Q.; Zhang, W. Y.; Zhang, W.; Zhang, B.
刊名THIN SOLID FILMS
2012-09-30
卷号520页码:6882-6887
关键词Titanium Carbide Radio-frequency Magnetron Sputtering Rutherford Backscattering Spectroscopy X-ray Diffraction
ISSN号0040-6090
DOI10.1016/j.tsf.2012.07.040
文献子类Article
英文摘要Single-crystal films of TiC (111) have been synthesized at room temperature on Al2O3 (0001) substrates by radio frequency magnetron sputtering using a compound Ti-C target. The substrate temperature and bias were varied to explore the influence of deposition parameters on the crystal structure. Both Al2O3 (0001) and Si (100) substrates were used for epitaxial growth of TiC films. A series of characterizations of TiC films were carried out, including Rutherford backscattering spectroscopy, X-ray diffraction, Raman and X-ray photoelectron spectroscopy. Single-crystal films of TiC (111) on the Al2O3 (0001) were demonstrated. (C) 2012 Elsevier B.V. All rights reserved.
WOS关键词TITANIUM CARBIDE ; THIN-FILMS ; DEPOSITION ; TI3SIC2 ; SPECTROSCOPY ; COATINGS
语种英语
出版者ELSEVIER SCIENCE SA
WOS记录号WOS:000308207000010
内容类型期刊论文
源URL[http://119.78.100.186/handle/113462/47788]  
专题中国科学院近代物理研究所
通讯作者Shi, L. Q.
作者单位Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China
推荐引用方式
GB/T 7714
Qi, Q.,Zhang, W. Z.,Shi, L. Q.,et al. Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature[J]. THIN SOLID FILMS,2012,520:6882-6887.
APA Qi, Q.,Zhang, W. Z.,Shi, L. Q.,Zhang, W. Y.,Zhang, W.,&Zhang, B..(2012).Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature.THIN SOLID FILMS,520,6882-6887.
MLA Qi, Q.,et al."Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature".THIN SOLID FILMS 520(2012):6882-6887.
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