Influence of heavy ion flux on single event effect testing in memory devices

doi:10.1016/j.nimb.2017.04.038

	Influence of heavy ion flux on single event effect testing in memory devices
	Luo, Jie1,2,3 ; Liu, Jie1 ; Sun, Youmei1 ; Hou, Mingdong 1; Xi, Kai 1; Liu, Tianqi 1; Wang, Bin 1; Ye, Bing 1
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2017-09-01
卷号	406 页码:431-436
关键词	Swift heavy ions Ion flux Single event effect Memory device
ISSN号	0168-583X
DOI	10.1016/j.nimb.2017.04.038
英文摘要	The natural space presents a particle flux variable environment and choosing a suitable flux value for ground-based single event experiments is an unresolved problem so far. In this work, various types of memory devices have been tested over the ion flux range from 10 to 10(5) ions/(cm(2).s) using different ions covering LET from 10.1 to 99.8 MeV.cm(2)/mg. It was found that for most devices the error rates of single event upsets are affected by the applied flux value. And the effect involving flux becomes prominent as it is increased above 10(3) ions/(cm(2).s). Different devices behave differently as the flux is increased and the flux effect depends strongly on the LET of the impinging ions. The results concluded in this experiment are discussed in detail and recommendations for choosing appropriate experimental flux are given. (C) 2017 Elsevier B.V. All rights reserved.
WOS关键词	SPACE ; ENVIRONMENT ; MODEL
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000407659500007
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/45441]
专题	中国科学院近代物理研究所
通讯作者	Liu, Jie
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Luo, Jie,Liu, Jie,Sun, Youmei,et al. Influence of heavy ion flux on single event effect testing in memory devices[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2017,406:431-436.
APA	Luo, Jie.,Liu, Jie.,Sun, Youmei.,Hou, Mingdong.,Xi, Kai.,...&Ye, Bing.(2017).Influence of heavy ion flux on single event effect testing in memory devices.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,406,431-436.
MLA	Luo, Jie,et al."Influence of heavy ion flux on single event effect testing in memory devices".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 406(2017):431-436.