p-Type Conversion of ZnO Thin Films by Plasma Immersion Ion Implantation

doi:10.1149/1.3156835

	p-Type Conversion of ZnO Thin Films by Plasma Immersion Ion Implantation
	Zhang, Shuyu 1; Liang, Rongqing 2; Ou, Qiongrong 2; Wu, Xiaojing 3; Jiang, Meifu 4; Nie, Zongfu 1; Liu, Feng 2; Chang, Xijiang 2; Wang, Yipeng 3; Du, Jilong 4
刊名	ELECTROCHEMICAL AND SOLID STATE LETTERS
	2009
卷号	12 页码:H329-H332
关键词	aluminium annealing doping profiles electrical resistivity hole density hole mobility II-VI semiconductors nitrogen plasma immersion ion implantation semiconductor doping semiconductor thin films sputter deposition vacancies (crystal) wide band gap semiconductors zinc compounds
ISSN号	1099-0062
DOI	10.1149/1.3156835
英文摘要	p-Type Al-N co-doped ZnO[ZnO:(Al,N)] thin films are successfully fabricated by plasma immersion ion implantation technique assisted with co-doping method. Hole concentration, resistivity, and mobility of the optimum p-type ZnO:(Al,N) film obtained are 2.89x10(17) cm(-3), 6.87 cm, and 3.15 cm(2) V(-1) s(-1), respectively. O(*) plays an important role in the reactions of plasma for its production of N atoms. Implanted N atoms are activated by postannealing, occupy oxygen vacancies (V(O)), and form nitrogen substitutions (N(O)) at O sites.
资助项目	National Natural Science Foundation of China[10775034] ; Shanghai Leading Academic Discipline[B113]
WOS关键词	NITROGEN ; TEMPERATURE ; DEPENDENCE ; PHYSICS
WOS研究方向	Electrochemistry ; Materials Science
语种	英语
出版者	ELECTROCHEMICAL SOC INC
WOS记录号	WOS:000268064500025
资助机构	National Natural Science Foundation of China ; Shanghai Leading Academic Discipline
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/31329]
专题	中国科学院近代物理研究所
通讯作者	Zhang, Shuyu
作者单位	1.Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China 2.Fudan Univ, Dept Illuminating Engn & Light Sources, Shanghai 200433, Peoples R China 3.Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China 4.Soochow Univ, Dept Phys Sci & Technol, Prov Key Lab Thin Films, Suzhou 215006, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Shuyu,Liang, Rongqing,Ou, Qiongrong,et al. p-Type Conversion of ZnO Thin Films by Plasma Immersion Ion Implantation[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS,2009,12:H329-H332.
APA	Zhang, Shuyu.,Liang, Rongqing.,Ou, Qiongrong.,Wu, Xiaojing.,Jiang, Meifu.,...&Xin, Qianqian.(2009).p-Type Conversion of ZnO Thin Films by Plasma Immersion Ion Implantation.ELECTROCHEMICAL AND SOLID STATE LETTERS,12,H329-H332.
MLA	Zhang, Shuyu,et al."p-Type Conversion of ZnO Thin Films by Plasma Immersion Ion Implantation".ELECTROCHEMICAL AND SOLID STATE LETTERS 12(2009):H329-H332.