Enhanced photoresponse of n-ZnO/p-GaN heterojunction ultraviolet photodetector with high-quality CsPbBr3 films grown by pulse laser deposition

doi:10.1016/j.jallcom.2019.06.215

	Enhanced photoresponse of n-ZnO/p-GaN heterojunction ultraviolet photodetector with high-quality CsPbBr3 films grown by pulse laser deposition
	Huang, Yu 1; Zhang, Lichun 1; Wang, Jianbu 2; Chu, Xinbo 1; Zhang, Dengying 1; Zhao, Xiaolong 2; Li, Xiaofei 1; Xin, Lianjie 1; Zhao, Yuan 1; Zhao, Fengzhou 1
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2019-09-25
卷号	802 页码:70-75
关键词	CsPbBr3 thin films Self-powered photodetector Pulse laser deposition Heterojunction Responsivity
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2019.06.215
英文摘要	High-quality CsPbBr3 thin films have been fabricated by pulse laser deposition (PLD) technique and severed as an interlayer for n-ZnO/p-GaN heterojunction ultraviolet (UV) photodetector. The self-powered photodetectors based on n-ZnO/CsPbBr3/p-GaN heterojunction exhibited a high peak responsivity of 44.53 mA/W and detectivity of 2.03X10(12) cm.Hz(1/2 )W(-1) under zero bias voltage, which has increased similar to 30 and similar to 178 times than that of the n-ZnO/p-GaN device, respectively. Meanwhile, the photodetector with excellent stable and reproducible characteristics were also demonstrated and the photoresponse time has been drastically shortened by inserting the CsPbBr3 interlayer. The key role of the CsPbBr3 interlayer, as a carrier transport layer, has been demonstrated by the energy-band diagram. The enhanced performances of n-ZnO/p-GaN heterojunction make them promising application in self-powered photodetectors. (C) 2019 Published by Elsevier B.V.
资助项目	National Natural Science Foundation of China[11504155] ; National Natural Science Foundation of China[61705096]
WOS关键词	QUANTUM DOTS ; FABRICATION ; DEVICES
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000474567000009
内容类型	期刊论文
源URL	[http://ir.fio.com.cn:8080/handle/2SI8HI0U/24599]
专题	自然资源部第一海洋研究所
通讯作者	Zhang, Lichun; Zhao, Fengzhou
作者单位	1.Ludong Univ, Sch Phys & Optoelect Engn, Yantai 264025, Peoples R China 2.MNR, Inst Oceanog 1, Qingdao 266061, Shandong, Peoples R China
推荐引用方式 GB/T 7714	Huang, Yu,Zhang, Lichun,Wang, Jianbu,et al. Enhanced photoresponse of n-ZnO/p-GaN heterojunction ultraviolet photodetector with high-quality CsPbBr3 films grown by pulse laser deposition[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2019,802:70-75.
APA	Huang, Yu.,Zhang, Lichun.,Wang, Jianbu.,Chu, Xinbo.,Zhang, Dengying.,...&Zhao, Fengzhou.(2019).Enhanced photoresponse of n-ZnO/p-GaN heterojunction ultraviolet photodetector with high-quality CsPbBr3 films grown by pulse laser deposition.JOURNAL OF ALLOYS AND COMPOUNDS,802,70-75.
MLA	Huang, Yu,et al."Enhanced photoresponse of n-ZnO/p-GaN heterojunction ultraviolet photodetector with high-quality CsPbBr3 films grown by pulse laser deposition".JOURNAL OF ALLOYS AND COMPOUNDS 802(2019):70-75.