Global well-posedness for the 4D epitaxial growth models

CORC > 上海财经大学 > 上海财经大学

	Global well-posedness for the 4D epitaxial growth models
	Fan, Jishan 1; Zhou, Yong 2,3
刊名	APPLIED MATHEMATICS LETTERS
	2015-11
卷号	49 页码:28-32
关键词	Epitaxy Thin film Slope selection Well-posedness
ISSN号	0893-9659
DOI	10.1016/j.aml.2015.04.006
英文摘要	We prove the global-in-time existence of strong solutions for the 4D epitaxial growth models with or without slope selection. This solves an open problem due to Li-Qiao-Tang (Li et al., 2014). (C) 2015 Elsevier Ltd. All rights reserved.
WOS研究方向	Mathematics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000358630100005
内容类型	期刊论文
源URL	[http://10.2.47.112/handle/2XS4QKH4/1450]
专题	上海财经大学
通讯作者	Zhou, Yong
作者单位	1.Nanjing Forestry Univ, Dept Appl Math, Nanjing 210037, Jiangsu, Peoples R China; 2.Shanghai Univ Finance & Econ, Sch Math, Shanghai 200433, Peoples R China; 3.King Abdulaziz Univ, Fac Sci, NAAM, Res Grp, Jeddah 21589, Saudi Arabia
推荐引用方式 GB/T 7714	Fan, Jishan,Zhou, Yong. Global well-posedness for the 4D epitaxial growth models[J]. APPLIED MATHEMATICS LETTERS,2015,49:28-32.
APA	Fan, Jishan,&Zhou, Yong.(2015).Global well-posedness for the 4D epitaxial growth models.APPLIED MATHEMATICS LETTERS,49,28-32.
MLA	Fan, Jishan,et al."Global well-posedness for the 4D epitaxial growth models".APPLIED MATHEMATICS LETTERS 49(2015):28-32.