To probe the performance of perovskite memory devices: defects property   and hysteresis

doi:10.1039/c7tc00266a

CORC > 北京大学 > 工学院

	To probe the performance of perovskite memory devices: defects property and hysteresis
	Xu, Ziqi ; Liu, Zonghao ; Huang, Yuan ; Zheng, Guanhaojie ; Chen, Qi ; Zhou, Huanping
刊名	JOURNAL OF MATERIALS CHEMISTRY C
	2017
关键词	RESISTIVE SWITCHING BEHAVIOR TRANSITION-METAL OXIDES SOLAR-CELLS IODIDE
DOI	10.1039/c7tc00266a
英文摘要	Hybrid organic-inorganic perovskite materials offer a range of interesting characteristics that are suitable for optoelectronic devices, such as photovoltaics. Along with the fast rise in device performance, a current density-voltage (J-V) hysteresis originating from defects and their movement has attracted intense attention, which renders challenges regarding the stability and reliability of the novel materials. Here, we carefully probe the effects of defects in perovskite materials and across interfaces within the device, in which bistable conductive states are achieved for the next generation of nonvolatile memory. The memory device shows an operating voltage as low as 0.25 V, and a decent ON/OFF ratio. More importantly, we correlate the defect density and hysteresis-index of different perovskite films with the corresponding memory device performance. The findings enrich our understanding of the working mechanism of perovskite memory devices, which will also benefit other organic-inorganic hybrid perovskite optoelectronics.; National Natural Science Foundation of China [51672008]; Young Talent Thousand Program; ENN Group; SCI(E); ARTICLE; 23; 5810-5817; 5
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/472720]
专题	工学院
推荐引用方式 GB/T 7714	Xu, Ziqi,Liu, Zonghao,Huang, Yuan,et al. To probe the performance of perovskite memory devices: defects property and hysteresis[J]. JOURNAL OF MATERIALS CHEMISTRY C,2017.
APA	Xu, Ziqi,Liu, Zonghao,Huang, Yuan,Zheng, Guanhaojie,Chen, Qi,&Zhou, Huanping.(2017).To probe the performance of perovskite memory devices: defects property and hysteresis.JOURNAL OF MATERIALS CHEMISTRY C.
MLA	Xu, Ziqi,et al."To probe the performance of perovskite memory devices: defects property and hysteresis".JOURNAL OF MATERIALS CHEMISTRY C (2017).