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Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer
Meng, Lan ; Zhang, Yanfeng ; Yan, Wei ; Feng, Lei ; He, Lin ; Dou, Rui-Fen ; Nie, Jia-Cai
刊名应用物理学快报
2012
关键词SCANNING-TUNNELING-MICROSCOPY EPITAXIAL GRAPHENE GAS SPECTROSCOPY 6H-SIC(0001)
DOI10.1063/1.3691952
英文摘要We report scanning tunneling microscopy and scanning tunneling spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle similar to 4.5 degrees, the Dirac point E-D is located about 0.40 eV below the Fermi level E-F due to the electron doping at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS measurements (with a time scale about 100 s). This behavior was attributed to the decoupling between the twisted graphene and the substrate during the measurements, which lowers the carrier density of graphene simultaneously. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691952]; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000301504800014&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 9; ARTICLE; 9; 100
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/234539]  
专题工学院
推荐引用方式
GB/T 7714
Meng, Lan,Zhang, Yanfeng,Yan, Wei,et al. Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer[J]. 应用物理学快报,2012.
APA Meng, Lan.,Zhang, Yanfeng.,Yan, Wei.,Feng, Lei.,He, Lin.,...&Nie, Jia-Cai.(2012).Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer.应用物理学快报.
MLA Meng, Lan,et al."Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer".应用物理学快报 (2012).
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