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	Hole mobility enhancements in strained InxGa1-xSb heterostructure p-channel MOSFETs
	Chang, Pengying ; Liu, Xiaoyan ; Zeng, Lang ; Du, Gang
	2015
关键词	V COMPOUND SEMICONDUCTORS ON-INSULATOR SI PHYSICS ALLOYS GE
英文摘要	We explore the use of strain and heterostructure design based on physical modeling to enhance the hole mobility in ultrathin body InxGa1-xSb-based p-channel MOSFETs. The band structure under quantum confinement is calculated by solving the six-band k.p Schrodinger and Poisson equations self-consistently. Hole mobility is modeled by the Kubo-Greenwood formula accounting for acoustic and optical phonons, polar optical phonons, surface roughness, and alloy scattering mechanisms. Physical models are calibrated with experimental data. Our results suggest that hole mobility in InxGa1-xSb-based devices increases with increasing InSb mole fraction x, especially under biaxial compressive strain. Mobility markedly deteriorates with the scaling down of body thickness in both unstrained and strained cases. Moreover, an insert of a very thin cap layer with a wide bandgap is helpful to enhance hole mobility. Therefore, greater mobility enhancements are achieved by strained heterostructure optimization. (C) 2015 The Japan Society of Applied Physics; NKBRP [2011CBA00604]; NSFC [61306104]; China Postdoctoral Science Foundation [2013M540018]; SCI(E); CPCI-S(ISTP); 4,SI; 54
语种	英语
出处	International Conference on Solid State Devices and Materials (SSDM 2014)
DOI标识	10.7567/JJAP.54.04DF08
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/493694]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chang, Pengying,Liu, Xiaoyan,Zeng, Lang,et al. Hole mobility enhancements in strained InxGa1-xSb heterostructure p-channel MOSFETs. 2015-01-01.

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