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Ballistic transport and quantum interference in InSb nanowire devices
Li Sen ; Huang Guangyao ; Guo Jingkun ; Kang Ning ; Caroff Philippe ; Xu Hongqi
刊名Chinese Physics. B
2017
关键词InSb nanowire ballistic transport quantum interference
英文摘要An experimental realization of a ballistic superconductor proximitized semiconductor nanowire device is a necessary step towards engineering topological quantum electronics. Here, we report on ballistic transport in InSb nanowires grown by molecular-beam epitaxy contacted by superconductor electrodes. At an elevated temperature, clear conductance plateaus are observed at zero magnetic field and in agreement with calculations based on the Landauer formula. At lower temperature, we have observed characteristic Fabry-Perot patterns which confirm the ballistic nature of charge transport. Furthermore, the magnetoconductance measurements in the ballistic regime reveal a periodic variation related to the Fabry- Perot oscillations. The result can be reasonably explained by taking into account the impact of magnetic field on the phase of ballistic electron's wave function, which is further verified by our simulation. Our results pave the way for better understanding of the quantum interference effects on the transport properties of InSb nanowires in the ballistic regime as well as developing of novel device for topological quantum computations.; Project supported by the National Key Basic Research and Development Project of the Ministry of Science and Technology of China,the National Natural Science Foundation of China; 中国科学引文数据库(CSCD); 2; 027305-1-027305-6; 26
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/477431]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Li Sen,Huang Guangyao,Guo Jingkun,et al. Ballistic transport and quantum interference in InSb nanowire devices[J]. Chinese Physics. B,2017.
APA Li Sen,Huang Guangyao,Guo Jingkun,Kang Ning,Caroff Philippe,&Xu Hongqi.(2017).Ballistic transport and quantum interference in InSb nanowire devices.Chinese Physics. B.
MLA Li Sen,et al."Ballistic transport and quantum interference in InSb nanowire devices".Chinese Physics. B (2017).
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