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	Thermal-Mechanical Reliability Assessment of TSV Structure for 3D IC Integration
	Liu, Huan ; Zeng, Qinghua ; Guan, Yong ; Fang, Runiu ; Sun, Xin ; Su, Fei ; Chen, Jing ; Miao, Min ; Jin, Yufeng
	2016
关键词	THROUGH-SILICON VIAS
英文摘要	In this paper, thermal-mechanical reliability of TSV structure was investigated with thermal shock test and finite element method. The fine pitch TSV samples were subjected to thermal load, failure samples were identified by resistance measurement, the calculated characteristic life was about 340 cycles. It is revealed that thermal-mechanical stress is concentrated around TSV, the ends of TSV are susceptible to failure. FEA results indicate maximum value of maximum principal stress appears at chip area near the ends of TSV, scallop side wall induces larger shear stress than smooth side wall thus more easily leads to interfacial failure. The warpage of chips and fatigue life of solder balls under different thermal load conditions were investigated in global simulation.; National Basic Research Program of China [2015CB057201]; Importation and Development of High-Caliber Talents Project of Beijing Municipal Institutions [CITTCD20150320]; National Natural Science Foundation of China [61176102]; National Center for Advanced Packaging, China; CPCI-S(ISTP); 758-764
语种	英语
出处	18th IEEE Electronics Packaging Technology Conference (EPTC)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/470096]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Huan,Zeng, Qinghua,Guan, Yong,et al. Thermal-Mechanical Reliability Assessment of TSV Structure for 3D IC Integration. 2016-01-01.

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