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	Simulation of the RRAM-based Flip-Flops with Data Retention
	Li, Mu ; Huang, Peng ; Shen, Lei ; Zhou, Zheng ; Kang, Jin-Feng ; Liu, Xiao-Yan
	2016
关键词	RRAM non-volatile flip-flop IoT 1T1R SPICE MODEL
英文摘要	A RRAM-based non-volatile flip-flop (NVFF) is designed to meet energy efficiency requirement for standby-power-critical applications in the deployment solution of IoT (Internet of Things). Adding only a pair of 1T1R cell into slave latch of a traditional FF can cut off the standby leakage at the cost of 4pJ write energy, and 20ps data retention time upon ideal power-on. The NVFF circuit is simulated and analyzed in HSPICE with a SPICE compact model of oxide-based RRAM on the conductive filament evolution model.; CPCI-S(ISTP); phwang@pku.edu.cn; xyliu@ime.pku.edu.cn
语种	英语
出处	7th IEEE International Nanoelectronics Conference
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/460104]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Mu,Huang, Peng,Shen, Lei,et al. Simulation of the RRAM-based Flip-Flops with Data Retention. 2016-01-01.

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