QQ客服 官方微博 反馈留言

	Thermal-Mechanical Reliability Analysis of Connection Structure between Redistribution Layer and TSV for MEMS Packaging
	Meng, Wei ; Zeng, Qinghua ; Guan, Yong ; Chen, Jing ; Jin, Yufeng
	2016
关键词	MEMS packaging reliability RDL opening copper thickness insulation layer thickness 3D INTEGRATION METALLIZATION OPTIMIZATION SILICON COPPER
英文摘要	This paper proposes a combination of annular copper and cylindrical copper as the TSV conductor to decrease the effect of thermal mismatch between copper and silicon in MEMS packaging, which results in a reliability risk between redistribution layer (RDL) and TSV. There are three important factors which may have the most serious influence on the reliability being simulated and analyzed. They are the opening diameter of RDL in insulation layer, the thickness of cylindrical copper and the thickness of insulation layer at the bottom of TSV. It is significant to understand the effect of the three factors and get the optimum structure parameters which can reduce the effect of the risky connection structure on the package reliability obviously.; National High Technology Research and Development Program of China (863) [2015AA043601]; National Natural Science Foundation of China [U1537208]; CPCI-S(ISTP); W.Meng@pku.edu.cn; lyzengqh@163.com; 254818282@qq.com; j.chen@pku.edu.cn; yfjin@pku.edu.cn
语种	英语
出处	11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/459754]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Meng, Wei,Zeng, Qinghua,Guan, Yong,et al. Thermal-Mechanical Reliability Analysis of Connection Structure between Redistribution Layer and TSV for MEMS Packaging. 2016-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。