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	An Investigation of DC/AC Hot Carrier Degradation in Multiple-fin SOI FinFETs
	Jiang, H. ; Liu, X. Y. ; Xu, N. ; He, Y. D. ; Du, G. ; Zhang, X.
	2015
关键词	multi-gate FET Silicon-on-insulator hot carrier degradation reliability N-FINFETS INJECTION MOSFETS GATE
英文摘要	In this paper, we comprehensively explore the hot carrier degradation (HCD) in multiple-fin SOI FinFETs under DC and AC stress condition. We understand the degradation mechanism in different fin numbers, different temperatures and different AC stress frequencies. Meanwhile, the impact of self-heating effect on hot carrier degradation has also been investigated.; CPCI-S(ISTP); xyliu@ime.pku.edu.cn; gangdu@pku.edu.cn; zhx@pku.edu.cn; 505-508
语种	英语
出处	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/450279]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Jiang, H.,Liu, X. Y.,Xu, N.,et al. An Investigation of DC/AC Hot Carrier Degradation in Multiple-fin SOI FinFETs. 2015-01-01.

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