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	An electronic synapse based on tantalum oxide material
	Yang, Xue ; Cai, Yimao ; Zhang, Zhenxing ; Yu, Muxi ; Huang, Ru
	2015
英文摘要	An electronic synaptic device with weight modulation and learning function is experimentally demonstrated based on a memristor with Ti/Ta2O5/TaOx/Pt structure, which shows good gradual resistance tuning characteristics. The device exhibits various synaptic functions including potentiation, depression, short/long term plasticity (STP/LTP) and Spike-Time-Dependent-Plasticity (STDP) under both DC sweep and pulse operations. The effects of modification pulse conditions such as pulse amplitude, width and interval on synaptic weight tuning was experimentally investigated. Moreover, the learning behavior similar to memory and consolidation in human brains is obtained in our device, indicating it is a promising candidate device for neural network implementation. ? 2015 IEEE.; EI
语种	英语
出处	15th Non-Volatile Memory Technology Symposium, NVMTS 2015
DOI标识	10.1109/NVMTS.2015.7457428
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/449532]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yang, Xue,Cai, Yimao,Zhang, Zhenxing,et al. An electronic synapse based on tantalum oxide material. 2015-01-01.

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