High-Performance Al-Sn-Zn-O Thin-Film Transistor With a   Quasi-Double-Channel Structure

doi:10.1109/LED.2015.2502621

CORC > 北京大学 > 信息科学技术学院

	High-Performance Al-Sn-Zn-O Thin-Film Transistor With a Quasi-Double-Channel Structure
	Cong, Yingying ; Han, Dedong ; Zhou, Xiaoliang ; Huang, Lingling ; Shi, Pan ; Yu, Wen ; Zhang, Yi ; Zhang, Shengdong ; Zhang, Xing ; Wang, Yi
刊名	IEEE ELECTRON DEVICE LETTERS
	2016
关键词	High-performance Al-Sn-Zn-O (ATZO) thin-film transistor (TFT) quasi-double-channel (QDC) structure MOBILITY DESIGN
DOI	10.1109/LED.2015.2502621
英文摘要	We successfully fabricated high-performance Al-Sn-Zn-O thin-film transistors (ATZO TFTs) with a quasidouble-channel (QDC) structure on glass by radio-frequency magnetron sputtering. The bilayer ATZO films are fabricated with different oxygen partial pressures during the sputtering process. The structure of the top ATZO layer is optimized to improve OFF-state performances. With this QDC structure, the ATZO TFT demonstrates excellent electrical performances, including a low OFF-state current of 840 fA, an ON/OFF current ratio of 1.08 x 10(9), a steep threshold swing of 0.16 V/decade, a superior saturation mobility of 108.28 cm(2)V(-) s(-1), and a threshold voltage of 2.09 V.; National Basic Research Program of China (973 program) [2013CBA01604]; National Natural Science Foundation of China [61275025]; SCI(E); EI; ARTICLE; handedong@pku.edu.cn; wangyi@ime.pku.edu.cn; 1; 53-56; 37
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/437893]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Cong, Yingying,Han, Dedong,Zhou, Xiaoliang,et al. High-Performance Al-Sn-Zn-O Thin-Film Transistor With a Quasi-Double-Channel Structure[J]. IEEE ELECTRON DEVICE LETTERS,2016.
APA	Cong, Yingying.,Han, Dedong.,Zhou, Xiaoliang.,Huang, Lingling.,Shi, Pan.,...&Wang, Yi.(2016).High-Performance Al-Sn-Zn-O Thin-Film Transistor With a Quasi-Double-Channel Structure.IEEE ELECTRON DEVICE LETTERS.
MLA	Cong, Yingying,et al."High-Performance Al-Sn-Zn-O Thin-Film Transistor With a Quasi-Double-Channel Structure".IEEE ELECTRON DEVICE LETTERS (2016).