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	Simulation and comparative study of tunneling field effect transistors with dopant-segregated Schottky source/drain
	Zhang, Yi Bo ; Sun, Lei ; Xu, Hao ; Han, Jing Wen
	2016
关键词	BARRIER MOSFETS REDUCTION DEVICES LEAKAGE HEIGHT DESIGN MODEL
英文摘要	Dopant-segregated Schottky source/drain tunneling field effect transistors (STFET) are investigated in this paper. The working mechanisms of STFET and the influence of device parameters are studied with Synopsys Sentaurus. Schottky source/drain MOSFETs possess several advantages over conventional MOSFETs, and dopant segregation can be feasibly achieved within current silicidation process. With dopant segregation, highly doped regions can be obtained after silicidation, which is necessary for band-to-band tunneling. With proper parameter setting, STFET can achieve comparable performance as TFET. High segregation doping for STFET is required to increase band-to-band tunneling probability and suppress bipolar behaviors. Increasing the electron barrier height at source side helps to provide larger drive current and higher on/off ratio. It is also found that STFET's on-state performance is irrelevant to the segregation length when the segregation length is larger than a certain value. Furthermore, STFET is also insensitive to the Schottky barrier at drain side when the Schottky barrier at source side is fixed, which would relax the requirement for source/drain fabrication. (C) 2016 The Japan Society of Applied Physics; SCI(E); EI; CPCI-S(ISTP); sunl@pku.edu.cn; 4,SI; 55
语种	英语
出处	JAPANESE JOURNAL OF APPLIED PHYSICS
DOI标识	10.7567/JJAP.55.04ED09
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/437432]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Yi Bo,Sun, Lei,Xu, Hao,et al. Simulation and comparative study of tunneling field effect transistors with dopant-segregated Schottky source/drain. 2016-01-01.

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