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	Multi-finger Schottky-Barrier tunneling FET with hybrid operation mechanism for steep transition and high on current
	Huang, Ru ; Huang, Qianqian ; Wu, Chunlei ; Wang, Jiaxin ; Chen, Cheng ; Zhu, Hao ; Guo, Lingyi ; Wang, Yangyuan
	2015
英文摘要	This paper discusses a kind of novel steep-slope switch device, named as multi-finger Schottky-Barrier TFET (MFSB-TFET), with hybrid adaptive operation mechanism, for higher on current, steeper slope as well as low off current. With the on state dominated by Schottky injection current, transition region dominated by band-to-band tunneling and the off current greatly suppressed with increased effective barrier height, the proposed silicon-based MFSB-TFET has experimentally demonstrated low SS, high on current and high on-off current ratio, exhibiting great potentials for ultra-low-power circuit applications. ? 2015 IEEE.; EI; 61-62
语种	中文
出处	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
DOI标识	10.1109/EDSSC.2015.7285049
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/436611]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, Ru,Huang, Qianqian,Wu, Chunlei,et al. Multi-finger Schottky-Barrier tunneling FET with hybrid operation mechanism for steep transition and high on current. 2015-01-01.

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