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	Low-frequency Testing of Through Silicon Vias for Defect Diagnosis in Three-dimensional Integration Circuit Stacking Technology
	Xu, Yichao ; Miao, Min ; Fang, Runiu ; Sun, Xin ; Zhu, Yunhui ; Sun, Minggang ; Wang, Guanjiang ; Jin, Yufeng
	2014
英文摘要	In order to qualify through silicon via (TSV) structures during manufacturing effectively and efficiently, two low-frequency testing methods were proposed here for electrical property and defect diagnosis of TSV samples. The first method (Method I) based on four-point probe test was adopted to measure via resistance and contact resistance, while the second method (Method II) based on two-point probe test was used to verify insulation integrity of TSVs. We adopted Simulated Method of Moments to illustrate the testing principles, carried out self-designed tests, and prepared samples on an industrial TSV packaging line as experimental validation. The effectiveness of the tests methods on four common types of defects were demonstrated by the simulation and test data analysis. The test methods proposed in this paper introduce a simple and low-cost solution for improving production efficiency in 3D integration circuit stacking technology, and they are being integrated into practical techniques for the industrial TSV packaging line.; EI; CPCI-S(ISTP); yfjin@pku.edu.cn; 1986-1991
语种	英语
出处	2014 IEEE 64TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)
DOI标识	10.1109/ECTC.2014.6897574
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/424015]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Yichao,Miao, Min,Fang, Runiu,et al. Low-frequency Testing of Through Silicon Vias for Defect Diagnosis in Three-dimensional Integration Circuit Stacking Technology. 2014-01-01.

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