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	Discussion and analysis of Au/a-Si contact resistance in MEMS/NEMS devices
	Fu, Fengshan ; Yang, Fang ; Wang, Wei ; Huang, Xian ; He, Jun ; Zhang, Li ; Guan, Taotao ; Li, Rui ; Zhang, Dacheng
	2015
英文摘要	In this work, reliable electric interconnection for MEMS/NEMS devices was realized by Au/a-Si (amorphous Si) and Au/c-Si (single-crystal Si) eutectic reaction in anodic wafer bonding process. We measured different resistances of di fferent bonding areas under different bonding temperature. When bonding temperature is under 370 ??C, the resistance of the different areas (from 200 ??m2 to 1000 ??m2) fluctuate within a narrow range and more than 80 % of the resistance is less than 10 ohm. Compared with Au/c-Si contact, Au/a-Si contact is more reliable. When bonding temperature is above 370 ??C, the resistance is related to the contact area and the discrete nature of the resistance is relatively large. According to statistics, more than 50 % of the resistance is above 100 ohm. ? 2015 IEEE.; EI; 593-596
语种	英语
出处	10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015
DOI标识	10.1109/NEMS.2015.7147499
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/423534]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Fu, Fengshan,Yang, Fang,Wang, Wei,et al. Discussion and analysis of Au/a-Si contact resistance in MEMS/NEMS devices. 2015-01-01.

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