Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2   Based RRAM Devices

doi:10.1155/2015/714097

CORC > 北京大学 > 信息科学技术学院

	Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices
	Liu, Lifeng ; Hou, Yi ; Zhang, Weibing ; Han, Dedong ; Wang, Yi
刊名	ADVANCES IN CONDENSED MATTER PHYSICS
	2015
DOI	10.1155/2015/714097
英文摘要	HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2 based RRAM devices was investigated. Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2 based RRAM devices with the ozone treatment is significantly improved. The uniformity improvement of HfAlO2 based RRAM devices is related to changes in compositional and structural properties of the HfAlO2 resistive switching film with the ozone treatment.; ADC 973; NSFC [2011CBA00600, 61376084, 60925015]; SCI(E); ARTICLE; lfliu@pku.edu.cn; handd@ime.pku.edu.cn
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/421250]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Lifeng,Hou, Yi,Zhang, Weibing,et al. Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices[J]. ADVANCES IN CONDENSED MATTER PHYSICS,2015.
APA	Liu, Lifeng,Hou, Yi,Zhang, Weibing,Han, Dedong,&Wang, Yi.(2015).Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices.ADVANCES IN CONDENSED MATTER PHYSICS.
MLA	Liu, Lifeng,et al."Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices".ADVANCES IN CONDENSED MATTER PHYSICS (2015).