Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide | |
Chen, Zhuofa ; Han, Dedong ; Zhao, Nannan ; Wu, Jing ; Cong, Yingying ; Dong, Junchen ; Zhao, Feilong ; Zhang, Shengdong ; Zhang, Xing ; Wang, Yi ; Liu, Lifeng | |
刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS |
2015 | |
关键词 | GLASS SUBSTRATE TEMPERATURE |
DOI | 10.7567/JJAP.54.04DF03 |
英文摘要 | By applying a novel active modulation layer of indium tin oxide/tin zinc oxide (ITO/TZO), we have successfully fabricated high-performance bottom-gate-type dual-active-layer thin-film transistors (TFTs) on a glass substrate at a low temperature by a simple process. The as-fabricated dual-active-layer ITO/TZO TFTs exhibited excellent electrical properties compared with single-active-layer TZO TFTs. We found that the dual-layer ITO/TZO TFT with an optimized stack structure of ITO (5 nm)/TZO (45 nm) as the channel layer exhibits excellent properties, namely, a high saturation mobility of 204cm(2)V(-1)s(-1), a steep subthreshold slope of 219mV/dec, a low threshold voltage of 0.8V, and a high on-off current ratio of 4.3 x 10(7). A physical mechanism for the electrical improvement is also deduced. Owing to its advantages, namely, a low processing temperature, a high electrical performance, a simple process, and a low cost, this novel active modulation layer is highly promising for the manufacture of oxide semiconductor TFT and transparent displays. (C) 2015 The Japan Society of Applied Physics; National Basic Research Program of China (973 Program) [2011CBA00600]; National Natural Science Foundation of China [61275025]; SCI(E); EI; ARTICLE; handedong@pku.edu.cn; lfliu@pku.edu.cn; 4,SI; 54 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/420555] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Chen, Zhuofa,Han, Dedong,Zhao, Nannan,et al. Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2015. |
APA | Chen, Zhuofa.,Han, Dedong.,Zhao, Nannan.,Wu, Jing.,Cong, Yingying.,...&Liu, Lifeng.(2015).Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide.JAPANESE JOURNAL OF APPLIED PHYSICS. |
MLA | Chen, Zhuofa,et al."Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide".JAPANESE JOURNAL OF APPLIED PHYSICS (2015). |
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