Fabrication of Ultrasensitive Field-Effect Transistor DNA Biosensors by a Directional Transfer Technique Based on CVD-Grown Graphene | |
Zheng, Chao ; Huang, Le ; Zhang, Hong ; Sun, Zhongyue ; Zhang, Zhiyong ; Zhang, Guo-Jun | |
刊名 | ACS APPLIED MATERIALS & INTERFACES |
2015 | |
关键词 | graphene field-effect transistor biosensor directional transfer technique peptide nucleic acid-DNA hybridization detection LABEL-FREE DETECTION CHEMICAL-VAPOR-DEPOSITION LARGE-AREA OXIDE HYBRIDIZATION PNA FILMS SPECTROSCOPY RECOGNITION SENSORS |
DOI | 10.1021/acsami.5b03941 |
英文摘要 | Most graphene field-effect transistor (G-FET) biosensors are fabricated through a routine process, in which graphene is transferred onto a Si/SiO2 substrate and then devices are subsequently produced by micromanufacture processes. However, such a fabrication approach can introduce contamination onto the graphene surface during the lithographic process, resulting in interference for the subsequent biosensing. In this work, we have developed a novel directional transfer technique to fabricate G-FET biosensors based on chemical-vapor-deposition- (CVD-) grown single-layer graphene (SLG) and applied this biosensor for the sensitive detection of DNA. A PET device with six individual array sensors was first fabricated, and SLG obtained by the CVD-growth method was transferred onto the sensor surface in a directional manner. Afterward, peptide nucleic acid (PNA) was covalently immobilized on the graphene surface, and DNA detection was realized by applying specific target DNA to the PNA-functionalized G-PET biosensor. The developed G-FET biosensor was able to detect target DNA at concentrations as low as 10 fM, which is 1 order of magnitude lower than those reported in a previous work. In addition, the biosensor was capable of distinguishing the complementary DNA from one-base-mismatched DNA and noncomplementary DNA. The directional transfer technique for the fabrication of G-FET biosensors is simple, and the as-constructed G-FET DNA biosensor shows ultrasensitivity and high specificity, indicating its potential application in disease diagnostics as a point-of-care tool.; National Natural Science Foundation of China [21275040, 21475034, 21405037]; Natural Science Foundation of Hubei Province [2013CFA061]; SCI(E); EI; PubMed; ARTICLE; zyzhang@pku.edu.cn; zhanggj@hbtcm.edu.cn; 31; 16953-16959; 7 |
语种 | 中文 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/417205] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Zheng, Chao,Huang, Le,Zhang, Hong,et al. Fabrication of Ultrasensitive Field-Effect Transistor DNA Biosensors by a Directional Transfer Technique Based on CVD-Grown Graphene[J]. ACS APPLIED MATERIALS & INTERFACES,2015. |
APA | Zheng, Chao,Huang, Le,Zhang, Hong,Sun, Zhongyue,Zhang, Zhiyong,&Zhang, Guo-Jun.(2015).Fabrication of Ultrasensitive Field-Effect Transistor DNA Biosensors by a Directional Transfer Technique Based on CVD-Grown Graphene.ACS APPLIED MATERIALS & INTERFACES. |
MLA | Zheng, Chao,et al."Fabrication of Ultrasensitive Field-Effect Transistor DNA Biosensors by a Directional Transfer Technique Based on CVD-Grown Graphene".ACS APPLIED MATERIALS & INTERFACES (2015). |
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