Improved unipolar resistive switching characteristics of   mixed-NiOx/NiOy-film-based resistive switching memory devices

doi:10.7567/JJAP.54.094201

CORC > 北京大学 > 信息科学技术学院

	Improved unipolar resistive switching characteristics of mixed-NiOx/NiOy-film-based resistive switching memory devices
	Liu, Lifeng ; Hou, Yi ; Chen, Bing ; Gao, Bin ; Kang, Jinfeng
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2015
关键词	METAL-OXIDE RRAM MODEL
DOI	10.7567/JJAP.54.094201
英文摘要	A mixed-NiOx/NiOy-film-based unipolar-type resistive switching memory device is proposed and fabricated. Mixed NiOx/NiOy films were prepared by two-step film deposition followed by furnace annealing. Mixed phases of Ni2O3 and NiO coexist across the mixed NiOx/NiOy films. Compared with a single-NiOy-film-based memory device, the mixed-NiOx/NiOy-film-based memory device shows improved unipolar resistive switching performances, including high ON/OFF ratio, sufficient operation voltage window, and good endurance characteristics. The improved memory performance could be attributed to the effect of oxygen-rich NiOx with more oxygen-rich Ni2O3, which can supply sufficient oxygen ions (O2-) for resistive switching in mixed-NiOx/NiOy-film-based resistive random access memory (RRAM) devices. (C) 2015 The Japan Society of Applied Physics; ADC 973 [2011CBA00600]; NSFC [61376084, 61421005, 61334007]; INSTSP [2011ZX02708]; SCI(E); EI; ARTICLE; lfliu@pku.edu.cn; 9; 54
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/416568]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Lifeng,Hou, Yi,Chen, Bing,et al. Improved unipolar resistive switching characteristics of mixed-NiOx/NiOy-film-based resistive switching memory devices[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2015.
APA	Liu, Lifeng,Hou, Yi,Chen, Bing,Gao, Bin,&Kang, Jinfeng.(2015).Improved unipolar resistive switching characteristics of mixed-NiOx/NiOy-film-based resistive switching memory devices.JAPANESE JOURNAL OF APPLIED PHYSICS.
MLA	Liu, Lifeng,et al."Improved unipolar resistive switching characteristics of mixed-NiOx/NiOy-film-based resistive switching memory devices".JAPANESE JOURNAL OF APPLIED PHYSICS (2015).