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	Design, manufacture and test of novel MEMS piezoresistive accelerometer for high g application
	Shi, JJ ; Hao, YL ; Zhang, W ; Zeng, ZJ
	2004
关键词	piezoresistive accelerometer crystal silicon MEMS Wheatstone bridge SiC
英文摘要	In order to test the anti-overload ability and the piezoresistive characteristics of silicon, this paper presents design, manufacture, and test of a novel accelerometer sensor, here we adopt crystal silicon as the base to make accelerometer for high g application other than silicon carbide. During the fabrication process, we adopted the bulk-silicon MEMS process empoldered by Peking University, we also explored a new method to attain acute pieresistance, meanwhile ICP and KOH guarantee the perfect release of the structure. Under the high g impact, the structure of the sensor deforms and shows uneven stress distribution, by the help of Wheatstone bridge that composes four piezoresistances, we can achieve the transform: from the inertial impact to the electricity signals. In conclusion, the results show that it has the sensitivity of 450similar to600 nV/g in the test range of 50000g, high anti-overload ability beyond 150000g, high yield(>90%). At the same time, it has the advantages of lower price and better compatibility with IC compared with SiC.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000225098000051&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Automation & Control Systems; Engineering, Biomedical; Engineering, Electrical & Electronic; Instruments & Instrumentation; Optics; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/406935]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Shi, JJ,Hao, YL,Zhang, W,et al. Design, manufacture and test of novel MEMS piezoresistive accelerometer for high g application. 2004-01-01.

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