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	PUNISM: An advanced surface potential based MOSFET model
	He, J. ; Song, Y. ; Niu, X. ; Li, B. ; Zhang, X. ; Huang, R. ; Chan, M. ; Wang, Y.
	2006
关键词	MOSFETs Nanoscale Technology Device Physics Compact Modelling Surface potential Solution Advanced MOSFET Model PUNSIM Parameter Extraction Model Verification
英文摘要	This paper reviews present compact model development and outlines the main features of the PUNISM, an advanced surface potential-based MOSFET model. The PUNSIM is developed to overcome mainly drawbacks of the traditional surface potential based models and aiming at fulfilling the features: The first-principle derivation of the complete MOSFET surface potential equation; Physics based analytic solution of the surface potential equation; Accurate description of inversion charge; Physics based channel current equation and calculation; Self-consistently modelling of short-channel effects; Unique parameter scaling technology to ensure the high accuracy parameter extraction. PUNSIM model takes the quite analytic formulation without any need for the smooth function and iteration mathematics, thus posses the surface potential based MOS model high accurate and continuous characteristics while obtaining computation efficiency, a must for the ULSI circuit simulation. The model predictions have also been verified by the numerical analysis and the wide experiment data, proving the PUNSIM validity.; Engineering, Electrical & Electronic; CPCI-S(ISTP); 3
语种	英语
DOI标识	10.1109/MIXDES.2006.1706549
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/406715]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, J.,Song, Y.,Niu, X.,et al. PUNISM: An advanced surface potential based MOSFET model. 2006-01-01.

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