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	Study on Electron Mobility in Nanoscale DG MOSFETs with Symmetric, Asymmetric and Independent Operation Modes
	Xu, Yiwen ; Chen, Lin ; Zhang, Lining ; Zhou, Wang ; He, Frank
	2010
关键词	SI INVERSION-LAYERS SILICON-ON-INSULATOR
英文摘要	Electron mobility in nanoscale double-gate (DG) MOSFETs with symmetric, asymmetric and independent operation modes is studied in this paper by using a comprehensive numerical model. A numerical program is first developed and then the dependence of electron mobility on device geometry and bias conditions are simulated. It is shown that that electron mobility changes monotonically with effective field in symmetric conditions while a peek in the curve of phonon-limited mobility versus the gate biases shows a new feature due to the impact of effective field on intra-valley and inter-valley scattering for independent gate operation mode.; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/INEC.2010.5424622
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/406232]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Yiwen,Chen, Lin,Zhang, Lining,et al. Study on Electron Mobility in Nanoscale DG MOSFETs with Symmetric, Asymmetric and Independent Operation Modes. 2010-01-01.

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