Impact of Process Induced Defects on the Contact Characteristics of   Ti/Graphene Devices

doi:10.1149/2.014112esl

CORC > 北京大学 > 信息科学技术学院

	Impact of Process Induced Defects on the Contact Characteristics of Ti/Graphene Devices
	Liu, W. J. ; Yu, H. Y. ; Wei, J. ; Li, M. F.
刊名	ieee ecs电化学与固体快报
	2011
关键词	RAMAN-SPECTROSCOPY GRAPHENE TRANSISTORS GRAPHITE POINT
DOI	10.1149/2.014112esl
英文摘要	Process induced variation of contact resistance (R(c)) in Ti/ graphene (single or multi-layer) devices is investigated physically and electrically. It is observed that contact resistivity rho(c) is independent of graphene layers when Ti is deposited by e-beam evaporation, while rho(c) increases with the reduction of graphene layers when Ti is deposited by sputtering process. It is proposed that the increased rho(c) can be attributed to the carbon defects (vacancies) created during sputter process in graphene, which is evidenced by Raman spectra. The carbon vacancies would introduce tensile strain in graphene layer, which is responsible for newly-created D band and red shift observed in Raman spectra. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.014112esl] All rights reserved.; Electrochemistry; Materials Science, Multidisciplinary; SCI(E); EI; 6; ARTICLE; 12; K67-K69; 14
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/395093]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, W. J.,Yu, H. Y.,Wei, J.,et al. Impact of Process Induced Defects on the Contact Characteristics of Ti/Graphene Devices[J]. ieee ecs电化学与固体快报,2011.
APA	Liu, W. J.,Yu, H. Y.,Wei, J.,&Li, M. F..(2011).Impact of Process Induced Defects on the Contact Characteristics of Ti/Graphene Devices.ieee ecs电化学与固体快报.
MLA	Liu, W. J.,et al."Impact of Process Induced Defects on the Contact Characteristics of Ti/Graphene Devices".ieee ecs电化学与固体快报 (2011).