Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs

doi:10.1166/jctn.2013.2684

CORC > 北京大学 > 信息科学技术学院

	Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs
	He, Jin ; Zhou, Zhize ; Yu, Cao ; He, Lin ; Ye, Yun ; Chan, Mansun
刊名	journal of computational and theoretical nanoscience
	2013
关键词	MOSFET Device Integrated Circuit Short-Channel Effect Compact Modeling SHORT-CHANNEL MOSFETS DESIGN PERFORMANCE TRANSISTORS
DOI	10.1166/jctn.2013.2684
英文摘要	This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson's equation to the heavily-doped region and lightly-doped region, respectively, and ultimately obtains the analytic expression of potential distribution and the drain current of the retrograde doping MOSFET. This paper compares the analytical model with numerical simulation results, which demonstrates that the current analytic model is applicable to both the weak and strong inversion situations and also to different geometry conditions. In this case, this model provides a foundation to develop a complete retrograde doping MOSFET model involved with advanced physical effects, such as short-channel effect, quantum mechanic effect.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000314372700036&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 0; ARTICLE; 1; 232-239; 10
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/392360]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Jin,Zhou, Zhize,Yu, Cao,et al. Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs[J]. journal of computational and theoretical nanoscience,2013.
APA	He, Jin,Zhou, Zhize,Yu, Cao,He, Lin,Ye, Yun,&Chan, Mansun.(2013).Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs.journal of computational and theoretical nanoscience.
MLA	He, Jin,et al."Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs".journal of computational and theoretical nanoscience (2013).