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	An analytical threshold voltage model of halo-implanted MOSFETs
	Wu, Tao ; Chen, Songtao ; Liu, Xiaoyan ; Du, Gang ; Han, Ruqi
	2004
英文摘要	An analytical threshold voltage model of sub-100nm halo-implanted MOSFETs is developed. The model is based on quasi-2-D solution the Poisson's equation. A linear approximate is used near drain side to simplify the surface potential model. The model is able to be applied in the circuit simulation.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/329237]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wu, Tao,Chen, Songtao,Liu, Xiaoyan,et al. An analytical threshold voltage model of halo-implanted MOSFETs. 2004-01-01.

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