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	Optimization of uniformity in resistive switching memory by reducing thermal effect
	Chen, Zhe ; Huang, Peng ; Li, Haitong ; Chen, Bing ; Hou, Yi ; Zhang, Feifei ; Gao, Bin ; Liu, Lifeng ; Liu, Xiaoyan ; Kang, Jinfeng
	2014
英文摘要	In this paper, a technical solution to suppress the fluctuation of resistive switching in resistive random access memory (RRAM) is proposed based on the physical understanding. To investigate the impact of thermal effect, we focus on ion migration affected by diffusion/drift forces and Joule heating. The results reveal that the duration of pulse width results in larger variation in LRS distribution due to oxygen ions diffusion assisted by thermal effect, while it has little impact on HRS distribution. Thus shorter pulse width is preferred to achieve better uniformity. The correctness of the proposed method is verified by the measured data. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2014.7021321
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295572]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, Zhe,Huang, Peng,Li, Haitong,et al. Optimization of uniformity in resistive switching memory by reducing thermal effect. 2014-01-01.

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