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	NI Germanide Schottky contact with GE
	Han, D.D. ; Liu, X.Y. ; Kang, J.F. ; Xia, Z.L. ; Du, G. ; Han, R.Q.
	2004
英文摘要	We have successfully fabricated Ni Germanide Schottky contact on n-Ge (100) by sputtering metal Ni on Ge followed by a furnace annealing in N2 from 300??C to 500??C. The results of the X-ray Diffraction (XRD) indicate that the NiGe germanides with (111), (121) and (002) crystallization phases were formed under various annealed temperature. A NiGe(111)/n-Ge (100) Schottky contact with 0.4eV barrier height formed under a 300??C annealing process shows the highest Ion/Ioff ratio.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295315]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Han, D.D.,Liu, X.Y.,Kang, J.F.,et al. NI Germanide Schottky contact with GE. 2004-01-01.

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