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	Surface uniform wet etching of ZnO films and influence of oxygen annealing on etching properties
	Zhang, Tao ; Sun, Lei ; Han, Dedong ; Wang, Yi ; Han, Ruqi
	2011
英文摘要	Wet etchings of ZnO films with HCl, H3PO4 and NH 4Cl as etchants were systematically studied. The etching morphology and etching rate were focused on and reported in details. The investigation shows that the NH4Cl aqueous solution can provide uniform etching rate in the entire regions exposed to the etchant, and the etching rate always changes linearly with NH4Cl solution concentrations in a wide range. The etching rate will be stable if a constant concentration is applied. We also took the influence of different annealing conditions on etching properties into accounts. Under a certain annealing condition, the NH4Cl aqueous solution still provides uniform etching properties and controllable etching rates. These properties of NH4Cl aqueous solution as etchant will bring wide design window to real applications. The above results indicate NH4Cl is a promising etchant for ZnO wet etching. ? 2011 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/NEMS.2011.6017433
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295200]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Tao,Sun, Lei,Han, Dedong,et al. Surface uniform wet etching of ZnO films and influence of oxygen annealing on etching properties. 2011-01-01.

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