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	The role of surface annihilation in annealing investigated by atomic model simulation
	Yu, Min ; Zhang, Xiao ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan ; Zhang, Jinyu ; Oka, Hideki
	2005
英文摘要	Behavior of point defects in annealing is investigated a lot in order to suppress the Transient Enhanced Diffusion (TED) of boron as is urged by the development of integrated circuits. Surface annihilation possibility for point defects is very important in determining junction depth in the case of ultra-shallow doping. However the understanding on it is still ambiguous considering the inconsistent results on surface annihilation behavior. In this paper the variation of surface annihilation possibility is studied. The simulation on boron diffusion as well as silicon diffusion is performed. The evolution of Si clusters is simulated. By explaining experimental results with Kinetic Monte Carlo method based simulation, we proposed that surface annihilation possibility varies in different cases. ? 2005 Materials Research Society.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295083]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yu, Min,Zhang, Xiao,Huang, Ru,et al. The role of surface annihilation in annealing investigated by atomic model simulation. 2005-01-01.

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