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	Investigation of RF performance of nano-scale ultra-thin-body schottky-barrier MOSFETs using Monte Carlo simulation
	Xia, Zhiliang ; Du, Gang ; Liu, Xiaoyan ; Kang, Jinfeng ; Han, Ruqi
	2006
英文摘要	A Monte Carlo investigation of the dynamic performance of nano-scale ultra-thin-body (UTB) Schottky-Barrier MOSFETs (SB-MOSFETs) is presented. A thorough account of how the gate voltage and SB barrier height affect the RF performance of UTB SB-MOSFETs is elaborated. The UTB SB-MOSFET offers excellent RF performance with high values of fT and fmax The peak fT is higher than 600 GHz with SB height ranging from 0.2eV to 0.3eV. It is found that gate voltage has a significant influence on fT and fmax of UTB SB-MOSFETs whereas the barrier height is of minor importance. However, both gate voltage and SB height affect the gm and gds obviously. For high performance of UTB SB-MOSFETs, appropriate gate voltage and SB height is of great importance. ? 2005 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/EDSSC.2005.1635268
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294989]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xia, Zhiliang,Du, Gang,Liu, Xiaoyan,et al. Investigation of RF performance of nano-scale ultra-thin-body schottky-barrier MOSFETs using Monte Carlo simulation. 2006-01-01.

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