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	AU-SWCNTS-HF Schottky diodes fabricated by dielectrophoresis
	Li, Mengge ; Zhang, Jinwen
	2014
英文摘要	In this paper we report a single-walled carbon nanotubes (SWCNTs) Schottky diodes fabricated by DEP technique. The device was made of semiconducting SWCNTs (s-SWCNTs) contacting with asymmetric-work-function metal electrodes of Au and Hf, and the properties were measured and analyzed in detail. The results show that our device has a good rectifying characteristic and could be tuned by a back gate voltage. Above 220K, thermionic emission is the dominant transport mechanism, while tunneling begins to lead below 220K. And the Schottky barrier height was calculated to be 0.48eV. ? 2014 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2014.7021643
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294857]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Mengge,Zhang, Jinwen. AU-SWCNTS-HF Schottky diodes fabricated by dielectrophoresis. 2014-01-01.

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