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	Performance improvement of reactive magnetron sputtering ZnO-TFT after annealing in N2 ambient
	Yao, Hui-Kun ; Sun, Lei ; Geng, You-Feng ; Li, Yong-Qi ; Xia, Yu-Qian ; Cai, Jian ; Zhu, Wen-Tong ; Han, De-Dong
	2012
英文摘要	Bottom-gated ZnO-TFTs have been fabricated under different conditions, and the devices' current-voltage properties are reported. The ZnO films are prepared by reactive magnetron sputtering, and then annealed in N2 ambient at 300??C for 1hour. The characteristics of the surface morphologies and microstructures of the samples were studied respectively. We also studied the effect of N2 annealing on the samples' physical structures and electrical characteristics. After annealing, the experimental results show that ZnO-TFTs can exhibit excellent electrical properties while Vg changes from -10 to 70V, and Ion/Ioff ratio is larger than 106 and OFF-state current is smaller than 1.2??10-10A as Vd=10V. ? 2012 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2012.6466745
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294648]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yao, Hui-Kun,Sun, Lei,Geng, You-Feng,et al. Performance improvement of reactive magnetron sputtering ZnO-TFT after annealing in N2 ambient. 2012-01-01.

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