QQ客服 官方微博 反馈留言

	Characteristics of submicron-footprint TiO2 based AlGaN/GaN MOSHEMT on SiC substrate
	Di, Meng ; Lin, Shuxun ; Wen, Cheng P. ; Wang, Maojun ; Wang, Jinyan ; Hao, Yilong ; Zhang, Yaohui ; Lau, Kei May ; Wu, Wengang
	2013
英文摘要	AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with thick (>30 nm), high-?? (TiO2/NiO), submicron-footprint (0.4 ??m) gate dielectric on SiC substrate are demonstrated, which are found to exhibit low gate leakage current (?? 1 nA/mm of gate periphery), high IMAX (1 A/mm), and high drain breakdown voltage (188 V). The derived current gain cutoff frequency is 30 GHz (from S-parameter measurements). The output power density is 6.6 W/mm, and the associated power-added-efficiency is 46% at 2.5 GHz frequency and 50 V drain bias. This high performance submicron-footprint MOSHEMT is highly promising for microwave power amplifier applications in communication and radar systems. ? 2013 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/EDSSC.2013.6628138
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294364]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Di, Meng,Lin, Shuxun,Wen, Cheng P.,et al. Characteristics of submicron-footprint TiO2 based AlGaN/GaN MOSHEMT on SiC substrate. 2013-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。