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	Fabrication and properties of self-aligned double-gate poly-Si TFT
	Zhang, SD ; Chan, MS ; Han, RQ ; Guan, XL ; Liu, XY ; Wang, YY
	2001
关键词	SILICON
英文摘要	In this paper, a novel self-aligned double-gate (SLambdaDG) TFT technology is proposed and experimentally demonstrated for the first time. The self-alignment between the top- and bottom-gate is realized by a non-critical chemical-mechanical polishing (CMP) step. An ultra-thin channel and a thick source/drain that allow better device performance and lower source/drain resistance, are also automatically achieved. N-channel polysilicon TFTs are fabricated with maximum fabrication temperature below 600 degreesC. The fabricated SABG-TFT exhibits symmetrical bi-directional transfer characteristics when the polarity of source/drain bias is interchanged. Moreover, the on-current under double-gate operation is more than 4 times that under single-gate operation, and more than 2 times the sum of that under top-gate and bottom-gate operation respectively. Furthermore, the effective mobility is also increased from 53 cm(-2)/V-s of single-gate mode to 87 cm(-2)/V-s of double-gate mode.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000174745900343&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293973]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, SD,Chan, MS,Han, RQ,et al. Fabrication and properties of self-aligned double-gate poly-Si TFT. 2001-01-01.

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