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	Simulation 70nm MOSFET by a 2-D full-band Monte Carlo device simulator with a quantum mechanical correction to the potential.
	Du, G ; Sun, L ; Liu, XY ; Han, RQ
	2001
英文摘要	The characterization of a 70nm MOSFET is simulated using a 2-D full-band Monte Carlo device simulator that has included the effect of quantum mechanical correction of the potential. The influence of quantum mechanical correction of the potential to the device characterization is studied.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293964]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Du, G,Sun, L,Liu, XY,et al. Simulation 70nm MOSFET by a 2-D full-band Monte Carlo device simulator with a quantum mechanical correction to the potential.. 2001-01-01.

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